A new type of transistor harnesses a new effect--called the quantum spin Hall effect -- to create a topological field effect transistor (TFET) according to a Massachusetts Institute of Technology (MIT) researcher who recently moved to the newly formed Department of Materials Science and Engineering at Texas A&M University where the Texas Advanced Computer Center (TACC) confirmed the researcher's results.
"We found that when deposited in a flat sheet just three atoms thick, our crystalline lattices exhibited a new electronic effect we call the quantum spin Hall effect," professor Xiaofeng Qian told EE Times.
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