A research team has successfully developed a new synthesis technology for 2D semiconductors. This technique enables the direct growth of wafer-scale single-crystal 2D semiconductors on various substrates. The research is published in Nature.
With the advancement of artificial intelligence (AI) technology, the demand for enhanced semiconductor performance has increased, along with active research on reducing power consumption in semiconductor devices. As a result, new semiconductor materials to replace conventional silicon are gaining attention.
Among them, 2D materials such as transition metal dichalcogenides (TMDs) have been highlighted as next-generation semiconductors due to their thin structure and excellent electrical properties. However, there is currently a lack of mass production technology to synthesize them in high quality and utilize them industrially.
The most promising synthesis method to date, chemical vapor deposition (CVD), suffers from issues such as degradation of electrical properties and the necessity of transferring grown TMDs to different substrates, adding extra complexity to the process. Additionally, the "epitaxy" method, which grows TMDs on highly crystalline substrates, also requires a transfer process and is limited to specific substrates.
Consequently, the development of advanced 3D integration technology based on high-quality TMDs has emerged as a crucial challenge in the modern semiconductor industry, further emphasizing the urgent need for a novel TMD synthesis method.
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