A recent study has revealed that electron transport in bilayer graphene is strongly influenced by edge states and a unique nonlocal transport mechanism. The research was led by Professor Gil-Ho Lee and Ph.D. candidate Hyeon-Woo Jeong from POSTECH’s Department of Physics, in collaboration with Dr. Kenji Watanabe and Dr. Takashi Taniguchi from Japan’s National Institute for Materials Science (NIMS). Their findings were published in Nano Letters, a leading nanotechnology journal.
Bilayer graphene, which consists of two stacked layers of graphene, has a special ability to adjust its electronic band gap using externally applied electric fields. This property is crucial for controlling electron transport and has positioned bilayer graphene as a key material in the emerging field of valleytronics.
Valleytronics takes advantage of an electron’s “valley,” a quantum state that acts as a data storage unit, enabling faster and more efficient data processing than traditional electronics or spintronics. Thanks to its adjustable band gap, bilayer graphene is considered a fundamental building block for future valleytronics research and next-generation electronic devices.
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