Nanoelectronics deal with extremely small electronic components—transistors, sensors and circuits that can fit on the tip of a needle. This technology powers our everyday lives through devices such as computers, smartphones and medical tools.
To improve the efficiency—and power—of these devices, scientists are searching for alternative materials to replace standard silicon-based semiconductors.
A University at Buffalo-led study, published in the journal ACS Nano, explores how mixing two-dimensional materials with silicon might achieve this goal. The article suggests a better way to inject and transport electric charges—an advancement that showcases the significant potential of 2D materials in advancing future semiconductor technologies.
"Our work investigates how emerging 2D materials can be integrated with existing silicon technology to enhance functionality and improve performance, paving the way for energy-efficient nanoelectronics," said the study's lead author Huamin Li, Ph.D., associate professor in the Department of Electrical Engineering.
"More complex devices, like three-terminal transistors, can benefit from our discovery, achieving enhanced functionality and performance."
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