Professor Jiwoong Yang and his team at the Department of Energy Science and Engineering, Daegu Gyeongbuk Institute of Science & Technology (DGIST), have developed a groundbreaking method to control doping during the nucleus (seed) phase of semiconductor nanocrystal growth. This innovation enhances the performance of nanocrystals and addresses critical challenges in the field.
The research, conducted in collaboration with Professor Stefan Ringe’s team at the Department of Chemistry, Korea University, revealed how doping processes and locations vary based on the type of doping element (dopant) used. This advanced technology has the potential to transform modern electronics, with applications in cutting-edge devices such as displays and transistors.
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