A group of Korean researchers have recently succeeded in developing new p-type semiconductor materials and thin-film transistors that will lead the innovation of the semiconductor industry. These new discoveries are expected to be widely utilized to improve the overall performance of next-gen displays and ultra-low power semiconductor devices.
Electronics and Telecommunications Research Institute (ETRI) has successfully developed a p-type Se-Te (Selenium-Tellurium) alloy transistor that can be easily deposited at room temperature via a simple process using a chalcogenide-based p-type semiconductor material. In addition, they have also developed a new technology that can systematically adjust and control the threshold voltage of n-type transistors through charge injection control of Te thin films in the heterojunction structure of n-type oxide semiconductor and p-type Te.
The work is published in the journal ACS Applied Materials & Interfaces.
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