A research team led by Professor Jang-Sik Lee from the Department of Materials Science and Engineering and the Department of Semiconductor Engineering at Pohang University of Science and Technology (POSTECH) has significantly enhanced the data storage capacity of ferroelectric memory devices. By utilizing hafnia-based ferroelectric materials and an innovative device structure, their findings, published on June 7 in the international journal Science Advances, mark a substantial advancement in memory technology.
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