Researchers have used an advanced model to simulate in unprecedented detail the workings of "resistance-switching cells" that might replace conventional memory for electronics applications, with the potential to bring faster and higher capacity computer memory while consuming less energy.
These electromechanical "metallization cells" rapidly switch from high resistance to low resistance - a two-state operation that could be used to represent the ones and zeros in the binary code needed to carry out software commands and store information in computers.
Researchers at Purdue University developed a new method to simulate the electrochemical processes that govern the operation with atomistic detail. The researchers used the model to simulate the performance of a type of resistance-switching cells also called conductive bridging cells.
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